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Transport and noise characteristics of MIS structure and their aplication on the NbO capacitors
Velísek, Martin ; Majzner, Jiří (referee) ; Sedláková, Vlasta (advisor)
The aim of my work was the study of niob-oxide capacitor properties. Capacitor structure NbO-Nb2O5-MnO represents the M-I-S structure where NbO anod has metalic conductivity and MnO2 is semiconductor. The capacitor connected in the normal mode with the positive voltage on the NbO anode represents the MIS structure connected in the reverse direction, when the applied votlage increases the potencial barrier between the insulator Nb2O5 and semiconductor (MnO2). The charge carrier transport is the Nb2O5 layer is determined by the Poole-Frenkel mechanism and tuneling in the normal mode. Poole-Frenkel mechanism of the charge carrier transport is dominant for low electric field in the dielectric layer; tunneling current is dominant for the high electric field. We can estimate the effective thickness of the dielectric layer and the ratio between the Poole-Frenkel and tunelling current from the modeling of measured VA characteristics.
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Analysis of stochastic processes in electronic components
Vlčková, Irena ; Šebesta, Vladimír (referee) ; Zajaček, Jiří (advisor)
The Bachelor Thesis deals with the interference of electronic parts, using of non-destructive analysis for electronic interference in semi-conductive parts and measured samples. The thesis is divided into thematic areas: Interference types; Spectrum of random continuous signals, Spectrum calculation due to the method of periodogram and the method sub-banding coding and following FFT, Apparatus for interference measuring, Results of interference measuring. In the practical part 5 and 6, there are measuring results of chosen electronic parts, transport and interference characteristics and they are compared with theoretical presumptions.
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Electronic Noise of Piezoceramic Sensors of Acoustic Emission
Majzner, Jiří ; Šikula, Josef (advisor)
In our work the analysis of electrical and noise characteristics of piezoceramic acoustic emission sensors is accomplished. The objective of our work is to analyze and optimize the signal-to-noise ratio. The starting point is the explanation of the noise origin in the acoustic emission sensors. The voltage fluctuation is caused by the dipole vibrations due to their interaction with phonons. The frequencies of dipoles vibrations have statistical distribution and the total energy of these vibrations is proportional to the temperature. The statistical distribution of vibration frequencies leads to the origination of the 1/f type noise spectral density. The interaction between the phonons and electric dipoles is characterized by the imaginary part of susceptibility which is related to the transformation of electric energy to the mechanical energy of vibrations. This process is irreversible and this forms important theoretical question whether the Callen-Welton fluctuation dissipation theorem could be used for the description of fluctuation processes in the acoustic emission sensors. In our work the influence of the real and imaginary part of the susceptibility on the noise and electrical characteristics is solved, the dissipation of electrical energy characterized by the imaginary part of susceptibility is described and the connection between the imaginary part of susceptibility and the noise power spectral density is discussed. Due to the fact that these processes originate in the interaction between electrical dipoles and phonons, we give account of the temperature dependencies of equivalent series resistance and power spectral density of noise voltage, respectively. Piezoceramics stiffness contribute significantly to the resonance creation hence the pressure influence on the sensor noise characteristics was studied. The signal-to-noise ration improvement requires the piezoceramic sample diameter increase for its constant thickness. The ratio of the noise spectral density and sensitivity is independent on the sample thickness. The noise voltage is proportional to the square root of spectral density and frequency bandwidth that is why for the high signal-to-noise ratio it is necessary to minimize the signal amplifier frequency bandwidth. The noise voltage power spectral density increases with the temperature while the activation energy is 20 meV for the temperature 300 K, and 80 meV for the temperature 400 K, respectively. The power spectral density of planar oscillations decreases with increasing pressure and simultaneously the resonant frequency increases. The bandwidth of the normalized spectral density increases with the pressure for the planar oscillations while is invariable for the thickness oscillations. For the examination of the influence of the piezoceramic electrical polarization on the electrical and noise characteristics the experimental study of these dependencies was accomplished for samples without polarization, and samples polarized by electric field EP = 500V/mm and 1000V/mm, respectively. The samples without polarization show the noise of 1/f type only which corresponds to the Callen-Welton fluctuation dissipation theorem. The polarization leads to the generation of planar and thickness oscillations and the power spectral density of voltage fluctuation on the electrodes is proportional to the temperature, and inversely proportional to the imaginary part of permittivity, to the sample area S, and the frequency f.
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Analysis of Fluctuation Processes of Solar Cells
Macků, Robert ; Chobola, Zdeněk (referee) ; Franc,, Jan (referee) ; Koktavý, Pavel (advisor)
The thesis deals issue of the silicon solar cells non-destructive testing. The manufacturing technology of solar cells currently features a very high level of perfection. Its further development appears to be limited by amongst other issues imperfect diagnostic methods. The objective of presented research consists in non-destructive studies of processes that influence specimen life and reliability. To this end, I will employ mainly noise based analytical methods in connection with observation of defect optical activities, capacitance measurement etc. These methods are closely related to some specimen bulk imperfections, crystal-lattice defect induced traps, local-stress-subjected regions and, finally, breakdowns, which might bring about specimen destruction. Based on a detailed study and understanding of transport processes, regions in which noise is generated can be identified and appropriate technological measures can be proposed and adopted. Presented research focuses, first of all, on the real solar cell structures, which are inhomogeneous in their nature and are difficult to diagnose. The significant part of this study is attend to the random n-level (in most case just two-level) impulse noise, usually referred to as microplasma noise. This noise is a consequence of local breakdowns in micro-sized regions and brings about reduction of lifetime or destruction of the pn junction. The micro-sized regions have been studied separately by electrical and optical methods and defect properties have been put forward. Nevertheless, no less significant part of the thesis is devoted to the fluctuation modeling of the bulk imperfections in the semi-analytical form.
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The Noise Spectroscopy of Radiation Detectors Based on the CdTe
Zajaček, Jiří ; Štourač, Ladislav (referee) ; Hájek, Karel (referee) ; Grmela, Lubomír (advisor)
The main object of this work is noise spectroscopy of CdTe radiation detectors (-rays and X–rays) and CdTe samples. The study of stochastic phenomenon and tracing redundant low-frequency noise in semiconductor materials require long-term measurements in time domain and evaluate suitable power spectral densities (PSD) with logarithmic divided frequency axes. We have used the means of time-frequency analysis derived from the discrete wavelet transform (DWT) and we have designed the effective algorithm for PSD estimation, which is comparable with an original analog method. CdTe single crystal with Au contacts we can imagine as a series connection of two Schottky diodes with a resistor between them. The bulk resistance at constant temperature and other constant parameters changes due to the carrier concentration changing only. The p-type CdTe sample shows metal behavior with every temperature changes. Semiconductor properties of the sample begin to dominate just after some period of time. This behavior is caused by the hole mobility changing. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. All the studied samples have very high value of low frequency noise, much higher than it should have been according to Hooge’s formula. The excess value of low frequency noise is caused by the low carrier concentration within the depleted region.
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Transport and noise characteristics of MIS structure and their aplication on the NbO capacitors
Velísek, Martin ; Majzner, Jiří (referee) ; Sedláková, Vlasta (advisor)
The aim of my work was the study of niob-oxide capacitor properties. Capacitor structure NbO-Nb2O5-MnO represents the M-I-S structure where NbO anod has metalic conductivity and MnO2 is semiconductor. The capacitor connected in the normal mode with the positive voltage on the NbO anode represents the MIS structure connected in the reverse direction, when the applied votlage increases the potencial barrier between the insulator Nb2O5 and semiconductor (MnO2). The charge carrier transport is the Nb2O5 layer is determined by the Poole-Frenkel mechanism and tuneling in the normal mode. Poole-Frenkel mechanism of the charge carrier transport is dominant for low electric field in the dielectric layer; tunneling current is dominant for the high electric field. We can estimate the effective thickness of the dielectric layer and the ratio between the Poole-Frenkel and tunelling current from the modeling of measured VA characteristics.
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Analysis of Fluctuation Processes of Solar Cells
Macků, Robert ; Chobola, Zdeněk (referee) ; Franc,, Jan (referee) ; Koktavý, Pavel (advisor)
The thesis deals issue of the silicon solar cells non-destructive testing. The manufacturing technology of solar cells currently features a very high level of perfection. Its further development appears to be limited by amongst other issues imperfect diagnostic methods. The objective of presented research consists in non-destructive studies of processes that influence specimen life and reliability. To this end, I will employ mainly noise based analytical methods in connection with observation of defect optical activities, capacitance measurement etc. These methods are closely related to some specimen bulk imperfections, crystal-lattice defect induced traps, local-stress-subjected regions and, finally, breakdowns, which might bring about specimen destruction. Based on a detailed study and understanding of transport processes, regions in which noise is generated can be identified and appropriate technological measures can be proposed and adopted. Presented research focuses, first of all, on the real solar cell structures, which are inhomogeneous in their nature and are difficult to diagnose. The significant part of this study is attend to the random n-level (in most case just two-level) impulse noise, usually referred to as microplasma noise. This noise is a consequence of local breakdowns in micro-sized regions and brings about reduction of lifetime or destruction of the pn junction. The micro-sized regions have been studied separately by electrical and optical methods and defect properties have been put forward. Nevertheless, no less significant part of the thesis is devoted to the fluctuation modeling of the bulk imperfections in the semi-analytical form.
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The Noise Spectroscopy of Radiation Detectors Based on the CdTe
Zajaček, Jiří ; Štourač, Ladislav (referee) ; Hájek, Karel (referee) ; Grmela, Lubomír (advisor)
The main object of this work is noise spectroscopy of CdTe radiation detectors (-rays and X–rays) and CdTe samples. The study of stochastic phenomenon and tracing redundant low-frequency noise in semiconductor materials require long-term measurements in time domain and evaluate suitable power spectral densities (PSD) with logarithmic divided frequency axes. We have used the means of time-frequency analysis derived from the discrete wavelet transform (DWT) and we have designed the effective algorithm for PSD estimation, which is comparable with an original analog method. CdTe single crystal with Au contacts we can imagine as a series connection of two Schottky diodes with a resistor between them. The bulk resistance at constant temperature and other constant parameters changes due to the carrier concentration changing only. The p-type CdTe sample shows metal behavior with every temperature changes. Semiconductor properties of the sample begin to dominate just after some period of time. This behavior is caused by the hole mobility changing. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. All the studied samples have very high value of low frequency noise, much higher than it should have been according to Hooge’s formula. The excess value of low frequency noise is caused by the low carrier concentration within the depleted region.
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Electronic Noise of Piezoceramic Sensors of Acoustic Emission
Majzner, Jiří ; Šikula, Josef (advisor)
In our work the analysis of electrical and noise characteristics of piezoceramic acoustic emission sensors is accomplished. The objective of our work is to analyze and optimize the signal-to-noise ratio. The starting point is the explanation of the noise origin in the acoustic emission sensors. The voltage fluctuation is caused by the dipole vibrations due to their interaction with phonons. The frequencies of dipoles vibrations have statistical distribution and the total energy of these vibrations is proportional to the temperature. The statistical distribution of vibration frequencies leads to the origination of the 1/f type noise spectral density. The interaction between the phonons and electric dipoles is characterized by the imaginary part of susceptibility which is related to the transformation of electric energy to the mechanical energy of vibrations. This process is irreversible and this forms important theoretical question whether the Callen-Welton fluctuation dissipation theorem could be used for the description of fluctuation processes in the acoustic emission sensors. In our work the influence of the real and imaginary part of the susceptibility on the noise and electrical characteristics is solved, the dissipation of electrical energy characterized by the imaginary part of susceptibility is described and the connection between the imaginary part of susceptibility and the noise power spectral density is discussed. Due to the fact that these processes originate in the interaction between electrical dipoles and phonons, we give account of the temperature dependencies of equivalent series resistance and power spectral density of noise voltage, respectively. Piezoceramics stiffness contribute significantly to the resonance creation hence the pressure influence on the sensor noise characteristics was studied. The signal-to-noise ration improvement requires the piezoceramic sample diameter increase for its constant thickness. The ratio of the noise spectral density and sensitivity is independent on the sample thickness. The noise voltage is proportional to the square root of spectral density and frequency bandwidth that is why for the high signal-to-noise ratio it is necessary to minimize the signal amplifier frequency bandwidth. The noise voltage power spectral density increases with the temperature while the activation energy is 20 meV for the temperature 300 K, and 80 meV for the temperature 400 K, respectively. The power spectral density of planar oscillations decreases with increasing pressure and simultaneously the resonant frequency increases. The bandwidth of the normalized spectral density increases with the pressure for the planar oscillations while is invariable for the thickness oscillations. For the examination of the influence of the piezoceramic electrical polarization on the electrical and noise characteristics the experimental study of these dependencies was accomplished for samples without polarization, and samples polarized by electric field EP = 500V/mm and 1000V/mm, respectively. The samples without polarization show the noise of 1/f type only which corresponds to the Callen-Welton fluctuation dissipation theorem. The polarization leads to the generation of planar and thickness oscillations and the power spectral density of voltage fluctuation on the electrodes is proportional to the temperature, and inversely proportional to the imaginary part of permittivity, to the sample area S, and the frequency f.
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Analysis of stochastic processes in electronic components
Vlčková, Irena ; Šebesta, Vladimír (referee) ; Zajaček, Jiří (advisor)
The Bachelor Thesis deals with the interference of electronic parts, using of non-destructive analysis for electronic interference in semi-conductive parts and measured samples. The thesis is divided into thematic areas: Interference types; Spectrum of random continuous signals, Spectrum calculation due to the method of periodogram and the method sub-banding coding and following FFT, Apparatus for interference measuring, Results of interference measuring. In the practical part 5 and 6, there are measuring results of chosen electronic parts, transport and interference characteristics and they are compared with theoretical presumptions.
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